Precision Meets Innovation
Atomic-Scale Precision for Next-Generation Semiconductors
Applied Angstrom Technology develops and delivers atomic layer etching solutions that enable the most demanding semiconductor manufacturing processes — from 3D NAND beyond 400 layers to sub-3nm gate-all-around transistors.
<0.1%
CD deviation in 10µm deep features
100:1+
Aspect ratio capability
0.3–1.0 nm
Etch per cycle precision
>90%
Radical dissociation efficiency
Products & Technology
Comprehensive solutions for atomic-scale semiconductor processing
The ALE Cycle — Live Animation
Watch the self-limiting etch process in action — each cycle removes exactly one atomic layer
Surface Modification
Cl₂ adsorption
Reactive gas modifies only the top atomic layer
Purge
Ar/N₂ flow
Inert gas removes unreacted species
Removal
Ar⁺ bombardment
Modified layer is selectively removed
Repeat
0.3–1.0 nm/cycle
Digital, atomic-scale etch depth control
Wafer Cross-Section — Live Etch Progress
The Angstrom Era
Why Atomic Layer Etching Matters
As semiconductor devices scale to sub-3nm nodes and 3D NAND exceeds 400 layers, conventional reactive ion etching cannot deliver the required atomic-scale precision. Aspect ratio dependent etching (ARDE) causes rate variation in deep, narrow features — degrading the uniformity that advanced devices demand.
ALE solves this fundamentally. By decomposing the etch into self-limiting half-reactions, each cycle removes exactly one atomic layer regardless of feature depth. The etch amount depends on dose, not flux — eliminating ARDE at aspect ratios beyond 100:1.
The ALE equipment market is projected to grow from $1.36B in 2025 to $2.74B by 2033, driven by 3D NAND scaling and gate-all-around transistor adoption.
ALE vs Conventional RIE
Enabling Advanced Applications
From memory to logic to advanced packaging — our solutions address the most critical etch challenges in semiconductor manufacturing.
3D NAND Flash
Channel holes at 100:1+ aspect ratio for 400-1000 layer devices
Gate-All-Around (GAA)
SiGe-selective ALE for nanosheet release in sub-3nm logic nodes
FinFET & DRAM
Precise gate, spacer, and high-AR capacitor etching with atomic uniformity
Advanced Packaging
TSV etching and hybrid bonding surface preparation at scale
Ready to Explore Atomic-Scale Precision?
Talk to our AI assistant or connect with our engineering team to discuss how ALE can solve your toughest etch challenges.